By Edwin W. Greeneich (auth.)
Analog built-in Circuits bargains with the layout and research of modem analog circuits utilizing built-in bipolar and field-effect transistor applied sciences. This booklet is acceptable as a textual content for a one-semester direction for senior point or first-year graduate scholars in addition to a reference paintings for practising engin eers. complicated scholars also will locate the textual content necessary in that many of the fabric offered this is no longer coated in lots of first classes on analog circuits. incorporated during this is an in depth insurance of suggestions amplifiers, current-mode circuits, and translinear circuits. compatible history will be basic classes in digital circuits and semiconductor units. This ebook comprises a variety of examples, lots of which come with advertisement analog circuits. End-of-chapter difficulties are given, many illustrating sensible circuits. bankruptcy 1 discuses the types everyday to symbolize units utilized in modem analog built-in circuits. provided are types for bipolar junction transistors, junction diodes, junction field-effect transistors, and metal-oxide semiconductor field-effect transistors. either large-signal and small-signal types are constructed in addition to their implementation within the SPICE circuit simulation application. the elemental development blocks utilized in a wide number of analog circuits are analyzed in bankruptcy 2; those include present resources, dc level-shift phases, single-transistor achieve phases, two-transistor achieve phases, and output phases. either bipolar and field-effect transistor implementations are provided. bankruptcy three bargains with operational amplifier circuits. The 4 easy op-amp circuits are analyzed: (1) voltage-feedback amplifiers, (2) current-feedback amplifiers, (3) current-differencing amplifiers, and (4) transconductance ampli fiers. chosen functions also are presented.
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Additional info for Analog Integrated Circuits
1-64) and 0-65) for operation in the saturation region are equivalent. The SPICE model adds the channel-length modulation term (1 + AVDs ) to the characteristic for operation in the triode region to avoid a discontinuity in the drain current at VDS = VGS - Vm. In practice, of course, there is no channel-length modulation in this region; the error, however, is small. EXAMPLE. Figure 1-26 shows a simple common-source JFET circuit. Determine the drain current In and the output voltage Va. 03 V-I.
Actual devices show a finite output conductance in the saturation region, characterized by the channellength modulation parameter A. G + o-:-i + VgS S S n-channel (a) p-channel + + S n-channel S (b) p-channel Figure 1-35 Circuit symbols and sign conventions for n-channel and p-channel MOS transistors. (a) Normal symbols for body connected to source. (b) Symbols for separate body connection. 1n Cbx. XjI is the distance by which the gate electrode overlaps the source and drain regions (2Xjl = LG - L in Fig.
From Eq. 778 mAN 3 From Eq. 665V Using Eq. 0498 F P The cutoff frequency from Eq. 4 Metal-Oxide-Semiconductor Field-Effect Transistor 35 depoSited oxide grown oxide P well N" N+ epl Substrate Figure 1-32 Cross-sectional view of an n-channel MOS integrated-circuit transistor. 4 Metal-Oxide-Semiconductor Field-Effect Transistor In the metal-oxide-semiconductor field-effect transistor (MOSFET), the gate control electrode is physically separated from the conducting channel by a thin insulating dielectric layer.